| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1512621 | Energy Procedia | 2013 | 8 Pages |
Abstract
In the paper, plasma immersion ion implantation (PIII) has been put forward to texture and dope the silicon for solar cells. The influence of PIII parameters on the surface structure has been investigated. The various surface structure of the silicon can be obtained by PIII texturing. Compared with acid texturing solar cells, the average conversion efficiency of PIII texturing solar cells has been improved by 0.7% absolute gain. The characteristics of PN junction formed by PIII doping have been investigated. The conversion efficiency of the solar cell can reach as high as 14.84% using PIII doping.
Related Topics
Physical Sciences and Engineering
Energy
Energy (General)
Authors
Bangwu Liu,