High Efficiency on Boron Emitter n-type Cz Silicon Bifacial Cells with Industrial Process

N-type Si solar cells gradually arrest comprehensively attention due to the potential to achieve high cell efficiency without light-induced degradation compare to p-type cells. Meanwhile, the rapid fall in photovoltaic price drives many researchers to continue developing multifarious technologies about efficiency improvement and cost reduction in the manufacture of solar cell process. In this article we introduce large area bifacial solar cells on n-type silicon using only industrial facilities. The boron emitter is formed by diffusion technique with BCl3 precursor and the phosphorus BSF is made by ion-implantation followed by an in-situ front and back passivation with dry oxidization. The resulting cell efficiency has achieved 19.7% on 156PSQ Cz wafers and zero LID has been proved after 72 h exposure at 50 °C under AM1.5G illumination. In addition, 3.03% of cell to module loss is confirmed using the structure of 36pcs n-bifacial cells with normal front glass and transparent backsheet.