A New Model for Light-induced Degradation by B-O Defects in p- and n-type Silicon

Light-induced degradation of the carrier lifetime in silicon due to the formation of boron-oxygen defects has been investigated using photoluminescence measurements. A finite difference simulation method has also been created to test theoretical models of the factors controlling defect generation. Experimental photoluminescence data is compared with simulated results. It is found that the maximum defect density in both p- and n-type material can be described as a function of the hole density during degradation.