Approach for a Simplified Fabrication Process for IBC-SHJ Solar Cells with High Fill Factors

In this paper, interdigitated back contacted silicon heterojunction (IBC-SHJ) solar cell results as well as two dimensional device simulations are presented. The simulation indicates that for the minority contact (emitter) the coverage of the metallisation should be nearly 100%, while this is less critical for the majority contact (BSF). We present experimental results for an IBC-SHJ solar cell with a metallisation fraction of 100% for the emitter and approximately 65% for the BSF, with a high fill factor of 77.7% and an independently confirmed energy conversion efficiency of 19.4%.