| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1513151 | Energy Procedia | 2012 | 6 Pages |
Abstract
A multidiode simulation determines the absolute solar cell efficiency gain due to gettering. The simulation predicts current/voltage characteristics of lateral inhomogeneous industrial solar cells from luminescence images measured before and after gettering or any other processing step. Improved lifetime distributions lead to a predicted increase in solar cell efficiency Δηabs = +0.46% for a POCl3 diffusion on multicrystalline silicon wafers. The simulative approach determines the gettering efficiency of any process step on any wafer material without preselection.
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