Laser Doping Strategies Using SiN:P and SiN:B Dielectric Layers for Profile Engineering in High Efficiency Solar Cell

In this paper an Excimer laser doping process is investigated from SiN:P and SiN:B PECVD layers used as dopant sources. It is demonstrated efficient doping effect with P and B with large doping range on both p+ and n+ pre-diffused regions. Doped regions are shown to be modified in term of surface concentration and depth by both laser-driven re-distribution and additional over-doping from doped dielectric source. When using laser doping from SiN:B layer, partial or complete compensation of the initial n+ emitter is highlighted. Moreover similar study with SiN:P demonstrated the potential for over-compensate the initial p+ emitter. These laser processes could be used for realization of adjacent p+ and n+ regions with controlled profiles. Moreover fluence ranges where material could be fully compensated are pointed.