High Quality Passivation Scheme Combined with Laser Doping from SiN:P and SiN:B Layer for Silicon Solar Cell

In this paper strategy combining both high passivation quality on n+ surface depleted emitter and P and B dopant source availability for further laser doping process from SiN:P and SiN:B layers is investigated. Passivation improvement is demonstrating by adding SiO2 based interfacial layer between n+ emitter and doped SiNx layer. Moreover efficient Excimer laser P and B doping is highlighted even through additional passivation layers. Surface concentration, profile shape and depth of both p+ and n+ doped regions could be tuned by using SiN:P or SiN:B layers, SiO2 interfacial layer type and laser fluence conditions. It is highlighted fluence ranges where the initial emitter can be fully compensated or over-compensated. Such processes could be helpful to simplify the complex fabrication of photovoltaic structures like IBC solar cells.