The study on the properties of black multicrystalline silicon solar cell varying with the diffusion temperature

The black multi-crystalline silicon (mc-Si) has been successfully produced by plasma immersion ion implantation. The microstructure and the reflectance of the black mc-Si have been investigated by atomic force microscope and spectrophotometer, respectively. Results show that the black mc-Si exhibits a hillock structure with a low reflectance. Besides, with decreasing the diffusion temperature, the external quantum efficiency of the black mc-Si solar cell increases below ∼550 nm wavelength due to reduced surface recombination. The optimal conversion effieciency of the black mc-Si solar cell is 15.50% at the diffusion temperature of 825 °C. Furthermore, it is interesting to find that there are something different between black mc-Si and acid etched mc-Si on the impact of diffusion.