| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1514239 | Energy Procedia | 2011 | 5 Pages |
Abstract
This work demonstrates the possibility for low-temperature Liquid-Phase Epitaxy (LPE) growth of lattice matched to GaAs substrate dilute nitride InGaAsN layers with good crystalline quality and high Hall electron mobility. X-ray microanalysis and X-ray diffraction methods have been used to determine the composition and crystalline quality of the grown InGaAsN layers. Surface roughness is examined by atomic force microscopy. N-related local vibration modes are observed by Raman scattering. The Hall electron mobility and free carrier concentration have been measured in the temperature range 80-300K by conventional Van der Pauw method.
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