| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1514242 | Energy Procedia | 2011 | 5 Pages |
Abstract
Tin sulfide (SnS) thin films were prepared by nano-multilayer method on glass substrate followed byrapid thermal processing at 300 °C for 5 minutes in Argon atmosphere. The films showed strong (040)crystal orientation for the films with stoichiometric ratio (Sn:S) of 1:1. The film had an optical energyband gap Eg=1.44 eV and a P-type conductivity with a resistivity of 500 Ω•cm. The activation energy ofthe SnS was 0.035 eV. symposium organizers: G. Conibeer; Yongxiang Li; J. Poortmans; M. Kondo; A. Slaoui; M. Tao; M. Topic
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