| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1514309 | Energy Procedia | 2011 | 6 Pages |
Abstract
In this work, a trench power MOSFET (U-MOS) with space-efficiency is investigated. Reduction of cell pitch is an effective approach to diminish the total specific on-resistance (Rds,sp) of U-MOS, with a realization of embedded source contact and protuberant gate. And the influence of some key parameters on U-MOS static performances are simulated and analyzed by TCAD-Process. Then the optimum parameters of a 75 V rated space-efficiency U-MOS for automotive applications with 94.59 mΩ·mm2 specific on-resistance is given.
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