| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1514310 | Energy Procedia | 2011 | 7 Pages |
Abstract
This paper presents a lateral double diffusion MOSFET (LDMOS) using high permittivity (high-K) material as the dielectric instead of conventional SiO2. The high-K dielectric is capable of cutting the surface peak field of the device, which allows higher drift region doping concentration and results in the improvements of breakdown voltage, on-resistance, and threshold voltage for the device. The mechanism is analyzed in detail and the device behavior with varying parameters are simulated by Medici, whose results demonstrate that device performance is effective improved with the replacement of SiO2 by high-K material.
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