Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1514652 | Energy Procedia | 2011 | 6 Pages |
Abstract
In this paper a method is presented to accurately and readily measure the interstitial oxygen concentration in silicon. This method relies on the modification of the Si resistivity after the generation of some oxygen-based Thermal Donors. The method is made very accurate due to the strong dependence of the thermal donors formation rate on the interstitial oxygen concentration. The presented procedure is non destructive and only requires a resistivity measurement setup and a standard 450 °C air furnace. Very high spatial resolution mappings can be achieved using up-to-date resistivity measurement tools.
Related Topics
Physical Sciences and Engineering
Energy
Energy (General)
Authors
Jordi Veirman, Sébastien Dubois, Nicolas Enjalbert, Mustapha Lemiti,