| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1515078 | Energy Procedia | 2010 | 11 Pages |
Abstract
The SEM showed that the thickness of the SnO2, ZnO, In2S3 and CuInS2 are 0.529; 0.684; 0.267 and 0.507 μm respectively. The optical band gap of the CuInS2 absorber material is 1,51 eV. The electrical properties of these structures are analysed from current-voltage (I-V) characteristics.
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Physical Sciences and Engineering
Energy
Energy (General)
Authors
N. Kamoun Allouche, T. Ben Nasr, N. Kamoun Turki, M. Castagne,