Geometric broadening in resonant tunneling through Si quantum dots

The current through a resonant tunneling diode consisting of Si quantum dots embedded in a SiO2 matrix is calculated and the resonance broadening effects caused by distributions of quantum dot diameter and asymmetric barrier thicknesses are simulated. It is demonstrated that a size distribution is extremly critical for the use of these structures as selective energy contacts for hot carrier solar cells, requiring precision at the order of 1 Å.