Correlation between strain and defects in Bi implanted Si

•High superposition of region with stopped Bi and I ions in Si and region with defects.•Intensity of the strain field significantly modifies the trap parameters.•Superposition of strain field and defect distribution depth is a second order effect.

The strain in Si containing group-V impurities is a topical subject of study due to its potential applications in quantum computing. In this paper we study 209Bi implanted Si concerning the correlation between the strain produced by stopped Bi ions and trapping characteristics of the defects resulted from implantation. The depths distributions of stopped ions and primary defects are simulated and the distributions of permanent defects are modelled for Si implanted with low fluence 209Bi ions of 28 MeV kinetic energy. For comparison, these depths distributions were similarly calculated for 127I ions with the same fluence and energy, implanted in Si. The results are compared with each other and correlated with the characteristics of traps in these systems, previously obtained. We demonstrate that the intensity of the strain field is the most important factor in changing of trap parameters, while the superposition between the region with strain and the region where defects are located is a second order effect.