| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1515636 | Journal of Physics and Chemistry of Solids | 2014 | 5 Pages |
•An indium rich and Ga, Cu poor surface of CIGS thin film was observed.•A hydroxide-terminated CdSe layer in the CIGS surface after Cd PE treatment.•TEM observation of CdS/CIGS interface.•XPS depth profile of CdS/CIGS interface.
Copper indium gallium selenide (CIGS) was deposited by metallic precursors sputtering and subsequently submitted to a selenization process. The upper CdS layers were deposited by chemical bath deposition (CBD) technique. The CdS/CIGS interfaces were investigated by Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). As checked by XPS analysis, the CIGS surface exhibited a hydroxide-terminated CdSe layer when treated with Cd Partial Electrolyte solution (Cd PE). Its thickness was roughly estimated to several nanometers. A 100 nm thick CdS layer was deposited onto CIGS surface. The TEM images revealed a clear and sharp interface between CdS and CIGS. XPS analysis showed a CIGS surface covered by a pinhole free and homogeneous CdS layer. XPS depth profile measurement of the CdS/CIGS interface did not evidence elemental inter-diffusion between the CIGS and CdS layers, in very good agreement with TEM observations.
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