Strain-tunable band gap in graphene/h-BN hetero-bilayer

Using full-potential density functional calculations within local density approximation (LDA), we predict that mechanically tunable band-gap and quasi-particle-effective-mass are realizable in graphene/hexagonal-BN hetero-bilayer (C/h-BN HBL) by application of in-plane homogeneous biaxial strain. While providing one of the possible reasons for the experimentally observed gap-less pristine-graphene-like electronic properties of C/h-BN HBL, which theoretically has a narrow band-gap, we suggest a schematic experiment for verification of our results which may find applications in nano-electromechanical systems (NEMS), nano opto-mechanical systems (NOMS) and other nano-devices based on C/h-BN HBL.

► We report ab initio study on strained graphene/h-BN hetero-bilayer (C/h-BN HBL). ► Fermi-velocities in graphene and narrow-gapped C/h-BN HBL are found identical. ► C/h-BN HBL shows band gap, Fermi velocity and effective masses all tunable by strain. ► A schematic experimental set-up for verification of these results is proposed. ► The results may find applications in graphene-based NEMS and other nano-devices.