| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1515988 | Journal of Physics and Chemistry of Solids | 2012 | 5 Pages |
The characteristics of TiN thin films grown on glass substrates by very low frequency (60 Hz) PECVD were investigated along with the reactive plasma generated using a 60 Hz power source. The TiN film depositions were performed using a gaseous mixture of H2, N2 and TiCl4 onto a substrate positioned between two electrodes using a floating substrate holder with a heating unit. The substrate is electrically floated to avoid sample damages due to ion bombardment. As-grown TiN films showed a NaCl-type fcc structure with a (200) crystallographic plane, low resistivity (∼60 μΩ cm) and gold-like color. Crystallinity was improved, impurities such as O and Cl were reduced, and the atomic ratio of N/Ti became stoichiometric with the increase of substrate temperature. Particularly, no chlorine component was detected above 500 °C. Also, the N2 partial pressure strongly affected the deposition rate and ratio of N/Ti. Otherwise, impurities and crystallinity barely changed with the change of N2 pressure. The atomic ratio of N/Ti, impurities, and crystallinity of the films significantly affected the optical and electrical properties. Consequently, we produced stoichiometric Cl-free TiN films with golden color above 500 °C at 60 mTorr. The effects of temperature played an important role in controlling the film properties compared to the N2 partial pressure.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► TiN films were grown on glass substrates using a low-frequency (60 Hz) PECVD. ► TiN film depositions were carried out in the glow discharge region. ► Chlorine-free TiN films with (200) growth plane were acquired above 400 °C. ► Ratio of Ti to N was controlled according to temperatures and N2 pressures. ► Properties of TiN films were strongly dependent on temperature and N2 pressure.
