| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1516227 | Journal of Physics and Chemistry of Solids | 2013 | 5 Pages |
Abstract
⺠We investigated the effect of surface roughness on the electrical characteristics in high-κ Sm2O3 a-IGZO TFT devices. ⺠The Sm2O3 a-IGZO TFT device annealed at 200 °C exhibited better electrical characteristics than other temperatures. ⺠The reliability of a Sm2O3 a-IGZO TFT can be improved by oxygen annealing at low temperature.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Fa-Hsyang Chen, Meng-Ning Hung, Jui-Fu Yang, Shou-Yi Kuo, Jim-Long Her, Yasuhiro H. Matsuda, Tung-Ming Pan,