| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1516347 | Journal of Physics and Chemistry of Solids | 2011 | 4 Pages |
Abstract
⺠ZnO-TFT with the active layer thickness of 20-100 nm annealed at 950 °C.⺠20 nm ZnO film did not effectively form the channel layer.⺠40 nm ZnO film exhibited the best performance.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Hai-Qin Huang, Feng-Juan Liu, Jian Sun, Jian-Wei Zhao, Zuo-Fu Hu, Zhen-Jun Li, Xi-Qing Zhang,