| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1516401 | Journal of Physics and Chemistry of Solids | 2013 | 4 Pages |
Abstract
⺠Mg2Si pn-junction diode was fabricated on single crystalline Mg2Si substrate by thermal diffusion. ⺠Current-voltage measurement of the pn-junction diodes showed clear rectifying characteristics at 300 K. ⺠Mg2Si pn-junction diodes showed clear photoresponsivity with a photon energy threshold of approximately 0.6 eV. ⺠Thermal diffusion coefficient of Ag in Mg2Si was determined experimentally.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Haruhiko Udono, Yusuke Yamanaka, Masahito Uchikoshi, Minoru Isshiki,