| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1516444 | Journal of Physics and Chemistry of Solids | 2013 | 4 Pages |
The interface states properties of a hybrid diode based on GaAs and Rhodamine organic semiconductor were investigated by current–voltage and capacitance–conductance–voltage measurements. The Al/Rhodamine/p-GaAs diode exhibits a rectification behavior with the barrier height value of 0.794 eV and ideality factor of 1.45. The interface states density of the diode was determined by Hill–Coleman method. The Dit value is decreased with increasing frequency. It is seen that the electronic parameters of the Al/Rhodamine/p-GaAs diode are significantly different from the conventional Al/p-GaAs Schottky diode. This indicates that Rhodamine organic semiconductor controls the interface properties of Al/p-GaAs Schottky diode.
Graphical abstractI–V characteristics of the Al/Rhodamine/p-GaAs Schottky diode Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► A hybrid diode based on GaAs and Rhodamine were fabricated. ► The diode exhibits a barrier height of 0.794 eV and ideality factor of 1.45. ► Rhodamine organic semiconductor controls the electronic properties of Al/p-GaAs Schottky diode.
