| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1516566 | Journal of Physics and Chemistry of Solids | 2012 | 5 Pages |
The effects of B2O3 on the microstructure and microwave dielectric properties of the 0.4Nd(Mg0.4Zn0.1Sn0.5)O3–0.6Ca0.8Sr0.2TiO3 ceramic system were investigated with a view to their use in microwave devices. A B2O3-doped 0.4Nd(Mg0.4Zn0.1Sn0.5)O3–0.6Ca0.8Sr0.2TiO3 ceramic system was prepared by the conventional solid-state method. The X-ray diffraction patterns of the B2O3-doped 0.4Nd(Mg0.4Zn0.1Sn0.5)O3–0.6Ca0.8Sr0.2TiO3 ceramic system did not significantly vary with sintering temperature. A 0.5 wt% B2O3-doped 0.4Nd(Mg0.4Zn0.1Sn0.5)O3–0.6Ca0.8Sr0.2TiO3 ceramic system that was sintered at 1350 °C for 4 h had a dielectric constant of 38.3, a quality factor Qf of 35,000 GHz, and a temperature coefficient of resonant frequency of −4.8 ppm/°C.
► 4NMZSCST ceramic system sintered at 1350 °C for 4 h had a dielectric constant of 38.3. ► 4NMZSCST ceramic system sintered at 1350 °C for 4 h had a Qf of 35,000 GHz. ► 4NMZSCST ceramic system sintered at 1350 °C for 4 h had a τfτf of −4.8 ppm/°C.
