| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1516604 | Journal of Physics and Chemistry of Solids | 2012 | 5 Pages |
Abstract
The temperature–dependent electrical resistivity ρ(T) in metallic and semiconducting phase of ZnO nanostructures is theoretically analysed. ρ(T) shows semiconducting phase in low temperature regime (140 K ▶ Resistivity of ZnO nanostructures is analyzed in semiconducting and metallic phase. ▶ Electron–phonon and electron–electron scattering mechanism used for metallic resistivity. ▶ Resistivity in semiconducting phase is analyzed using small polaron conduction model.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
K.K. Choudhary,