| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1516734 | Journal of Physics and Chemistry of Solids | 2011 | 6 Pages |
Pure, urea and thiourea doped hippuric acid (HA) single crystals have been grown in acetone using slow evaporation technique at a constant temperature, with the vision to improve the properties of the crystals. The crystal systems and the unit cell parameters of the grown crystals were identified from single crystal X-ray diffraction. The crystalline nature of the grown crystals was confirmed by powder X-ray diffraction and the diffraction peaks were indexed. The variations in composition due to the addition of dopants were identified by CHNS analysis. FT-IR studies reveal the presence of different vibrational bands. The optical characteristics were assessed by UV–vis analysis and it indicates the transmission in the visible region. TGA and DSC studies indicate the thermal behavior of pure and doped crystals. The Second Harmonic Generation (SHG) has been tested using Kurtz Powder Technique for the pure and doped crystals. It is found that the thiourea doped hippuric acid crystals have SHG efficiency of 2.08 times higher than that of potassium dihydrogen phosphate (KDP) single crystal. The dielectric studies were carried out, and the variations of dielectric constant and dielectric loss with temperature have been studied.
Graphical abstractVariation of dielectric constant with temperature of pure hippuric acid crystals. Figure optionsDownload full-size imageDownload as PowerPoint slideResearch highlights► Pure, urea and thiourea doped hippuric acid crystals were grown by slow evaporation. ► Variations in composition due to the addition of dopants were identified by CHNS analysis. ► SHG efficiency of thiourea doped hippuric acid crystals is 2.08 times that of KDP crystal. ► Thermal and optical studies reveal the suitability of the crystals for device applications.
