Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1516762 | Journal of Physics and Chemistry of Solids | 2012 | 5 Pages |
Thin ZnSe layers were deposited on ZnO nanowires by a novel successive ionic layer adsorption and reaction technique in order to solve recombination problems in ZnO nanowire-based dye-sensitized solar cells (DSSCs). Cell efficiency increased from 0.1 to 1.3–1.4% with the deposition of a 9- to13-nm-thick ZnSe shell on ZnO nanowires due to a large increase in JSC. The dramatic increase in JSC and cell efficiency is due to the facilitation of electron transfer related to ambipolar diffusion by the formation of a type II band alignment and the suppression of recombination in the presence of the ZnSe shell.
► ZnSe layers formation on ZnO nanowires to fabricate dye-sensitized solar cell. ► Increase in cell efficiency with the deposition of thin ZnSe shell on ZnO nanowires. ► Result of type II band alignment and suppression of recombination.