Properties of In2S3 thin films deposited onto ITO/glass substrates by chemical bath deposition

In2S3 films have been chemically deposited on ITO coated glass substrates by chemical bath deposition, using different deposition times and precursor concentrations. The bilayers are intended for photovoltaic applications. Different characterization methods have been employed: optical properties of the films were investigated from transmittance measurements, structural properties by XRD and micro-Raman, and surface morphology by SEM microscopy analysis. Also, the direct and indirect band-gaps and the surface gap states were studied with surface photovoltage spectroscopy (SPS). We proposed that electronic properties of the In2S3 samples are controlled by two features: shallow tail states and a broad band centred at 1.5 eV approximately. Their relation with the structure is discussed, suggesting that their origin is related to defects created on the S sub-lattice, and then both defects are intrinsic to the material.