Article ID Journal Published Year Pages File Type
1516973 Journal of Physics and Chemistry of Solids 2011 4 Pages PDF
Abstract

Ten layers of self-assembled InMnAs quantum dots with InGaAs barrier were grown on high resistivity (1 0 0) p-type GaAs substrates by molecular beam epitaxy (MBE). The presence of ferromagnetic structure was confirmed in the InMnAs diluted magnetic quantum dots. The ten layers of self-assembled InMnAs quantum dots were found to be semiconducting, and have ferromagnetic ordering with a Curie temperature, TC=80 K. It is likely that the ferromagnetic exchange coupling of sample with TC=80 K is hole mediated resulting in Mn substituting In and is due to the bound magnetic polarons co-existing in the system. PL emission spectra of InMnAs samples grown at temperature of 275, 260 and 240 °C show that the interband transition peak centered at 1.31 eV coming from the InMnAs quantum dot blueshifts because of the strong confinement effects with increasing growth temperature.

Research highlights► Ten layers of self-assembled InMnAs quantum dots with InGaAs barrier were grown by MBE. ► Ferromagnetic exchange couplings of InMnAs quantum dots with a Curie temperature of 80 K. ► Interband transition peak centered at 1.31 eV coming from the InMnAs quantum dot.

Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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