| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1517036 | Journal of Physics and Chemistry of Solids | 2011 | 5 Pages |
Abstract
⺠Trap levels in Ga3InSe4 crystals were studied by the thermally stimulated currents technique. ⺠Evidence is established for one hole trapping center with activation energy of 62 meV. ⺠The capture cross-section of the trap was determined as 1.0Ã10â25 cm2. ⺠The concentration of trap was found to be 1.4Ã1017 cmâ3.
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Authors
M. Isik, N.M. Gasanly,