Nanoscratch studies of SiGe epitaxial layer damage on the Si substrate

The present study evaluates the wear performance of silicon–germanium (SiGe) epitaxial growth of thin films, in which the in situ scratch profile is followed by ex situ atomic force microscopy (AFM) examinations. The wear evaluation of SiGe films was carried out at different constant loads (2000, 4000, and 6000 μN) with the same sliding speeds. The microstructural morphology was observed by means of transmission electron microscopy (TEM)Findings show that annealing treatments of SiGe films exhibit the highest scratch resistance at 400 °C compared to that of the as-deposited sample. The main characteristic of SiGe film is its ability to withstand wear resistance; observations show that moderate compressive residual is beneficial to the film, since it can suppress crack initiation. The annealing treatments of SiGe films revealed the resultant adhesive and cohesive failure mechanism.

► The scratching resistance damage of SiGe epitaxial layer was evaluated. ► The adhesive and cohesive failure mechanism of SiGe films is found by annealing treatments. ► The annealing treatment produced misfit dislocations as a significant wavy sliding surface.