Role of growth temperature and oxygen partial pressure on the structural and electrical properties of pulsed laser deposited La1−xSrxnO3−δ thin films

The paper presents the fabrication and characterization of La0.65Sr0.35MnO3−δ (LSMO) polycrystalline thin films deposited directly on Si (1 0 0) substrates using pulsed laser deposition technique. Various deposition parameters like substrate temperature and oxygen partial pressure have been varied systematically to obtain stoichiometric, crack-free films with smooth surface morphology having nearly monodisperse grain size distribution. The substrate temperature variation from 600 to 800 °C had profound effects on the microstructure and topography of the deposited film, with optimum result being obtained at 700 °C. The variation of partial pressure of oxygen controls the deposition kinetics as well as the stoichiometry of the film in terms of oxygen vacancy, which influences the magnetic and electrical transport properties of the manganate films. The microstructure and crystallinity of the deposited films have been studied using X-ray diffraction, scanning electron microscopy and atomic force microscopy. A correlation between the oxygen stoichiometry and micro-structural and transport properties of the deposited films has been obtained.

► Polycrystalline LSMO thin films grown by pulsed laser deposition. ► Effects of deposition condition on the structural and electrical properties. ► Correlation between the oxygen stoichiometry and micro-structural and transport properties.