Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1517723 | Journal of Physics and Chemistry of Solids | 2008 | 4 Pages |
Abstract
The magnitude and direction of charge transfer in GaAs at various temperatures have been analyzed using our precise and extensive single-crystal X-ray diffraction data. The charge transfer parameters were obtained by employing a quadratic equation method and precise X-ray structure factors collected at 170, 200, 250 and 300Â K. A transfer of charge from gallium atom to arsenide atom is evidenced at all the above temperatures.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
R. Saravanan, S. Jainulabdeen, N. Srinivasan, Y.B. Kannan,