Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1517915 | Journal of Physics and Chemistry of Solids | 2009 | 4 Pages |
Abstract
Samples with the chemical formula Cu1âxZnxFe2O4 (x=0.2, 0.4, 0.6, 0.8 and 1) were prepared by the standard ceramic method. The dielectric constant and dielectric loss tangent were studied as a function of vacancy jump rate. The results show that the dielectric constant and dielectric loss tangent decrease with increasing vacancy jump rate. In addition, the electron jump length in the octahedral sites was studied as a function of zinc concentration. The increase in jump length with Zn concentration has been attributed to the substitution of Fe+3 for Zn2+ at the A-sites, which increases the B-B interaction. The increase of diffusion coefficient with increasing Zn concentration was reinforced by the increase of jump rate.
Related Topics
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Materials Science
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Authors
H.M. Zaki,