| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1518223 | Journal of Physics and Chemistry of Solids | 2008 | 4 Pages |
Abstract
We investigated the local atomic arrangements around In atoms of plasma-assisted molecular beam epitaxy (MBE) grown GaInNAs films using In K-edge extended X-ray absorption fine structure (EXAFS) oscillations. The obtained radial distribution function (RDF) clearly showed two peaks coming from the first nearest In-As bond and the second nearest In-cation bond. These two atomic distances were longer than the bond lengths theoretically calculated under an assumption of random distributions of Ga and In on cation sites and N and As on anion sites, respectively. It means that there are strong In-N and In-In correlations in GaInNAs films. The strong correlations suggest the formation of the InNAs-like particles, which can cause the spacially inhomogeneous emission.
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Authors
Takahiro Mori, Takashi Hanada, Toshiharu Morimura, Genki Kobayashi, Takafumi Yao, Takao Miyajima, Tomoya Uruga,