Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1518232 | Journal of Physics and Chemistry of Solids | 2008 | 4 Pages |
Abstract
In this work, we present a detailed transmission electron microscopy analysis of the interfacial structure and composition uniformity of (Ga,In)(N,As) quantum wells grown by molecular beam epitaxy on vicinal GaAs(1Â 1Â 1)B substrates. Vertical composition fluctuations inside the (Ga,In)(N,As) quantum well are detected depending on the growth conditions, in particular the V/III flux ratio and the growth rate. This vertical composition fluctuation due to the phase separation tendency is in contrast to the (0Â 0Â 1) case, where the fluctuations proceed in the lateral direction. The specific character of the phase instabilities is discussed with respect to the spinodal decomposition of the (Ga,In)(N,As) alloy grown by step-flow on the misoriented (1Â 1Â 1)B substrates. The vertical composition fluctuations are explained by the formation of step bunches of alternating composition as a consequence of the different propagation velocity of steps with different atom terminations.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
E. Luna, A. Trampert, J. Miguel-Sánchez, A. Guzmán, K.H. Ploog,