| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1518238 | Journal of Physics and Chemistry of Solids | 2008 | 4 Pages |
Abstract
Positron lifetime measurements have been carried out on liquid-encapsulated Czochralski-grown undoped InP samples sliced from the middle part of ingots over the temperature range 10–300 K. And at 70 K, the spectra have been measured in darkness, under illumination of infrared LED, and with illumination off is one sample. The measurements at low temperature reveal different concentration of hydrogen indium vacancy complex VInH4 in these samples. A relatively higher concentration of VInH4 in samples grown from P-rich undoped InP melts can be shown. The increase of resistivity of these samples can be speculated when temperature is low enough.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Niefeng Sun, Luhong Mao, Weidong Mao, Hezou Wang, Xiang Wu, Keyun Bi, Zhengping Zhao, Weilian Guo, Xiawan Wu, Xiaolong Zhou, Bingke Chen, Yanjun Zhao, Kewu Yang, Tongnian Sun,