Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1518268 | Journal of Physics and Chemistry of Solids | 2008 | 5 Pages |
Abstract
Low-k organosilicate glass (SiOC:H) film as inter-metal dielectric (IMD) layer in advanced ultra-large-scale integrated circuits (ULSI) was deposited by plasma-enhanced chemical vapor deposition (PECVD) with trimethylsilane (TMS) and oxygen. The effects of oxygen on the bonding configuration, optical and electrical properties were investigated by adjusting TMS/O2 gas ratios. The absorbance spectra of Fourier transform infrared (FT-IR) spectroscopy shows that the frequency of the Si-O stretching vibration mode shifted to a lower wave number (red shift) with an increase in the ratio of TMS/O2. The related elements contented in SiOC:H films calculated from FT-IR spectra coincided with the analysis of Rutherford backscattering spectroscopy. Results of optical and electrical properties indicated that a lower refractive index (RI), a higher strength of breakdown voltage, a lower dielectric constant, and a lower leakage current density were achieved at lower TMS/O2 gas ratios.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Sheng-Wen Chen, Chuan-Pu Liu, Shiu-Ko JangJian, Ying-Lang Wang,