| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1518310 | Journal of Physics and Chemistry of Solids | 2008 | 6 Pages |
Abstract
Low temperature (290 °C) area selective regrowth (ASR) by the intermittent injection of TEGa and AsH3 in UHV was applied for the fabrication of ultra-shallow sidewall GaAs tunnel junctions. Tunnel junction characteristics are seriously dependent on the sidewall orientations and the surface treatment conditions just prior to the regrowth. The junction characteristics and those associations with defects were shown in view of the doping characteristics and the photocapacitance results. And the effects of quantization by the reduction of junction area were also shown.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Yutaka Oyama,