| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1518417 | Journal of Physics and Chemistry of Solids | 2007 | 4 Pages |
Abstract
Stress measurements of the thin films deposited on special silicon cantilevers were performed in a period of 3 months and the relation between AgI content and stress was defined. In addition, the compositional dependence of the stress relaxation of the studied glassy Ge-S-AgI coatings was elucidated and the most probable reasons for the stress formation were proposed.
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Authors
B. Monchev, C. Popov, P. Petkov, T. Petkova, J.P. Reithmaier,