Photo- and thermally induced interdiffusion in Se/As2S3Se/As2S3 nanomultilayers prepared by pulsed laser deposition and thermal evaporation

The effects of light- and thermally stimulated interdiffusion in Se/As2S3 nanomultilayers (NML) with modulation period of 6–9 nm fabricated by pulsed laser deposition (PLD) and by the method of cyclic thermal evaporation (CTE) of the Se and As2S3 components were investigated by means of direct low-angle X-ray diffraction (LAXRD) measurements and by indirect methods of optical measurements. More pronounced nano-granular structure is characteristic for PLD samples but at the same time the interfaces are essentially sharpened, the periodicity and the initial blue-shift of the optical absorption edge are better in comparison with CTE samples. Somewhat less efficient interdiffusion and changes of optical parameters i.e. amplitude-phase recording in PLD samples in comparison with CTE ones may be caused by different deposition conditions, ratio of sub-layer's thickness and their structure, eventually by changes in chemical composition.