| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1518505 | Journal of Physics and Chemistry of Solids | 2007 | 4 Pages |
Abstract
In order to study the electronic conduction in LaFe0.5Ga0.5O3, dielectric properties have been mainly investigated below TNâ215K along with dc measurements, where TN is the Néel temperature which was obtained by magnetic measurement. In dielectric loss factor, a relaxation process with a hopping energy of 0.32Â eV shows up. Such a process is an evidence for polaronic conduction of adiabatic small polarons taking place in bulks as well as LaFeO3. The reduction of the hopping energy due to Ga-doping has been discussed based upon the polaron theory. It has been found out that variations of optical dielectric constant and polaron radius by Ga-doping are mainly responsible for the small hopping energy in LaFe0.5Ga0.5O3.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
S. Komine, E. Iguchi,