Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1518603 | Journal of Physics and Chemistry of Solids | 2005 | 4 Pages |
Abstract
Structural electrical and optical properties of AgInS2 (AIS) thin films grown by the single-source thermal evaporation method were studied. The X-ray diffraction spectra indicated that the AIS single phase was successful grown by annealing above 400 °C in air. The AIS grain sizes became large with increasing the annealing temperatures. All polycrystalline AIS thin films were sulfur-poor from the electron probe microanalysis and indicated n-type conduction by the Van der Pauw technique. It was deduced that the sulfur vacancies were dominant in the films and enhanced n-type conduction.
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Authors
Y. Akaki, S. Kurihara, M. Shirahama, K. Tsurugida, S. Seto, T. Kakeno, K. Yoshino,