| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1518638 | Journal of Physics and Chemistry of Solids | 2007 | 4 Pages |
Abstract
Local structure of Mn atoms in Ga1âxMnxAs epilayers was studied using the X-ray absorption fine structure (XAFS) at Mn K-edge. X-ray near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) techniques were used. XAFS spectra for different Mn sites has been calculated and compared with the experimental data. Multi-parameter fitting of the EXAFS data indicates that 15-25% of Mn atoms are in interstitial sites in the as grown films. The Mn-As bond length has been found longer than Ga-As bond length in GaAs for both substitutional (MnGa) and interstitial (MnI) sites.
Keywords
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
R. Bacewicz, A. Twaróg, A. Malinowska, T. Wojtowicz, X. Liu, J.K. Furdyna,