Raman studies of lattice and local vibrational modes of GaInNAs prepared by molecular beam epitaxy

Polarized Raman spectra have been studied on the lattice-matched Ga0.94In0.06N0.025As0.975 epitaxial layers grown on (100) GaAs by molecular beam epitaxy. Polarization dependence of TO and LO phonon modes has been examined. The N-related local vibrational mode (LVM) in GaInNAs has been studied with emphasis on the light polarization and the effect of the thermal annealing. The thermal annealing-induced change of the N-related LVM in GaInNAs is discussed in terms of the local atomic arrangement around N atoms.