Article ID Journal Published Year Pages File Type
1518667 Journal of Physics and Chemistry of Solids 2005 4 Pages PDF
Abstract

CuAlO2 thin film was successfully prepared by rapid thermal annealing of an Al2O3/Cu2O/sapphire structure in air above 1000 °C. The film was mostly with single crystalline structure as verified by X-ray diffraction methods. We found that crystal quality and electrical conductivity of the films were affected by the cooling rate after annealing. The highest conductivity obtained in this work was 0.57 S/cm. Optical gap of this film was determined to be 3.75 eV.

Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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