Determination of electrical and solar cell parameters of FTO/CuPc/Al Schottky devices

A Schottky structure is fabricated using CuPc sandwiched between fluorinated tin oxide (FTO) and aluminium electrodes. The electrical properties of the device are measured at room temperature. Permittivity of the device is calculated from capacitance measurements. The saturation current density, J0=5.1×10-4(Amp/m2), diode ideality factor, n=3.02n=3.02 and barrier height, ϕ=0.84eV are determined for the Schottky juction. Reverse bias lnJ versus lnV1/2 is interpreted in terms of Schottky emission. Solar cell parameters are determined from the JJ–VV characteristics. Power conversion efficiency, ηη of 0.0024% is obtained for the cell. Band gap energy of the material is determined from UV-visible absorption spectrum.