Article ID Journal Published Year Pages File Type
1518771 Journal of Physics and Chemistry of Solids 2007 7 Pages PDF
Abstract

Nanocrystalline ZnTiO3 thin films have been grown on Si (1 0 0) at room temperature by using simple, cost effective sol–gel process assisted by microwave irradiation for thermal treatment. For comparison purpose the deposited films have subjected to two kinds of annealing treatments: first set by using conventional annealing and second set by irradiating the deposited films at different microwave powers for 10 min. In both treated films, formation of cubic phase ZnTiO3 structure has been observed. It is evident that there is a dramatic structural modification when the deposited films are exposed to microwave. It is evident that there is a dramatic change in the morphological properties of the films irradiated in microwave compared to the conventional annealing temperature. Microwave exposed films have shown 19% of Zn, 19% of Ti and 62% of O in the films close to the stiochiometry of the ZnTiO3, where as annealed films have shown 18% of Zn, 17.5% of Ti, and 64.5% of O in the films of ZnTiO3. Plausible mechanism for the formation of cubic phase of ZnTiO3 at low microwave powers has also been discussed. This new innovative microwave heating could open a door for the advanced technologies to cut down the process cost in post treatment of the materials.

Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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