Effective masses of electrons, heavy holes and positrons in quasi-binary (GaSb)1−x(InAs)x crystals

The present investigation is focused on the effective masses of electrons, heavy holes and positrons in quasi-binary (GaSb)1−x(InAs)x crystals. To the best of our knowledge, this is the first time such quantities have been obtained for such a quasi-binary crystals. Our computations are based on the pseudopotential scheme within the virtual crystal approximation in which the effects of composition disorder are involved, while the positron wave function is evaluated under the point core approximation for the ionic potential. Comparisons are made with the measured values, which are only available for binary parent compounds and showed roughly good agreement. The calculated quantities in the quasi-binary crystals of interest are found to be generally different from those of the conventional quaternary alloys GaInAsSb which may provide more diverse opportunities to describe most carrier transport properties.