| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1519093 | Journal of Physics and Chemistry of Solids | 2007 | 4 Pages |
Abstract
Doping sulphur into titania has been tried using TiS2 as a doper based on the mechanically induced solid-state reaction between TiO2 and TiS2. The prepared samples have been characterized by X-ray diffraction (XRD), Raman spectroscopy and UV–Vis reflectance spectroscopy. Raman analysis, particularly has been proved to be effective in assessing the sulphur doping by correlating the oxygen deficiency of the doped oxide with the change of active Eg mode of rutile phase.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Jun Wang, Qiwu Zhang, Shu Yin, Tsugio Sato, Fumio Saito,